PP1.3a(ii): III-V Cells on Silicon Using GaAsP Buffer Layers

Project Coordinator: 
Chief Investigators: 
Stephen Bremner, Anita Ho-Baillie

This approach exploits a number of advantages of using gallium phosphide (GaP) as a bridging layer from the silicon substrate to high potential efficiency III-V materials. Foremost is the demonstrated ability to grow very high quality GaP on silicon, the ability of the high bandgap GaP to act as a window layer, as well as favourable band alignments for carrier flow in multi-junction solar cells.