PP1.3a(i): III-V Cells on Silicon Using SiGe Buffer Layers
This strategy of PP1.3a is to take advantage of the miscibility between Si and Ge to grow a series of SixGe1-x buffer layers on Si, with x steadily decreasing. In this way, the lattice constant can be changed from that of Si to that of Ge after growth of a micron or more of buffer material. High quality III-V cells can then be grown on the Ge surface.
1. Demonstrate tandem solar cell with target efficiency greater than 28% and pathway to 33%.
2. Develop gold-free electrical contacts.
3. Demonstrate solar cell fabrication on SIRF pilotscale line or similar commercial pilot line.