PP1.2b: Passivated Contacts
The objective of this sub-project is to investigate several possible avenues for passivating the metal/semiconductor contacts required by all silicon solar cells. Ideally, these selective contacts should permit the passage of one type
of charge carrier while perfectly blocking the other type. In the most common implementation of silicon solar cells, electron and hole selectivity is partially achieved by diffusing dopants into the silicon wafer, forming n+ and p+ regions. These regions cannot block minority carriers completely, even when optimised. The main reason is that recombination at the contact between the metal and the n+ or p+ semiconductor is practically unavoidable with conventional technology. In this sub-project we will investigate different avenues to passivate the contacts, aiming to produce proof-of-concept results.